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- Thunderbolt 5 External Drives (Fastest – Up to 80Gb/s)
- Thunderbolt 4 External Drives (High Speed – Up to 40Gb/s)
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- USB4 External Drives (Modern USB – Up to 40Gb/s)
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- USB 3.0 External Drives (Standard Speed – Up to 5Gb/s)
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- Graphic Card Enclosures
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- Thunderbolt 4 Enclosures
- Thunderbolt 3 Enclosures
- USB4 Enclosures
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- Samsung 8GB DDR4 3200MHz (PC4-25600) SO-DIMM Laptop RAM 1.2V CL22 Samsung 8GB DDR4 3200MHz (PC4-25600) SO-DIMM Laptop RAM 1.2V CL22
- Description
- Specification
- Compatibility
- Reviews
Samsung 8GB DDR4 PC4-25600 3200MHz SODIMM
Samsung 8GB DDR4 PC4-25600 3200MHz 260‑pin SODIMM is a single-module laptop memory upgrade designed to deliver responsive multitasking and smoother everyday performance for notebooks that accept DDR4 SODIMM modules.
Built to Samsung's quality standards, this 8GB stick runs at 3200MHz with a CL22 latency at a low 1.2V operating voltage, providing a balance of speed and energy efficiency for office work, web browsing, media playback, and light content creation. Install it to increase available RAM, reduce swapping to disk, and make common workflows feel noticeably snappier.
Features and Benefits
- 8GB capacity (8GB x 1) — single SODIMM module for memory upgrades.
- DDR4 PC4-25600 standard providing 3200MHz data rate.
- 260‑pin SODIMM form factor compatible with laptop memory slots that accept 260‑pin DDR4 modules.
- 1.2V operating voltage for efficient power use in portable systems.
- CL22 latency as specified by the module's timings.
- Vendor: Samsung
- Capacity: 8GB (8GB x 1)
- Type: DDR4 PC4-25600
- Speed: 3200MHz
- Form Factor: 260-pin SODIMM
- Voltage: 1.2V
- CAS Latency: CL22
- Product Category: RAM
Device Compatibility:
- Compatible with laptops and small-form-factor systems that accept 260‑pin DDR4 SODIMM modules supporting 3200MHz operation.
Notes:
- Requires a system motherboard/BIOS that supports DDR4 SODIMM memory and 3200MHz speeds; some systems may downclock the module to a lower supported frequency.
- If installing alongside existing memory, mixing different speeds, voltages, or timings may cause the system to run all memory at the lowest common speed/timings.